Demonstration of High Performance TFTs on Silicon-on-Glass (SiOG) Substrate

TLDR

SiOG technology offers the potential to integrate high‑performance circuits and added functionality into mobile display systems. This work develops and analyzes a new silicon‑on‑glass substrate and CMOS devices fabricated on it. The substrate is produced by anodic bonding and implant‑induced separation of a single‑crystalline silicon film onto glass, yielding an ultra‑strong, thermally stable bond with an in‑situ barrier layer free of mobile ions. SiOG devices exhibit carrier mobility and off‑state leakage currents comparable to those of SOI (SIMOX) wafers.

Abstract

The development of a new silicon-on-glass (SiOG) substrate and device technology is presented. The SiOG material technology consists of anodic bonding and an implant-induced separation to transfer a single crystalline silicon film onto a glass substrate. The silicon-glass interface region is characterized by an ultra-strong and thermally stable bond, and includes an in situ barrier layer that is free of mobile ions. The fabrication and analysis of CMOS devices fabricated on the SiOG substrate are also presented. The SiOG devices are comparable to those fabricated on SOI (SIMOX) wafers with respect to carrier mobility and off-state leakage current. One application for this SiOG technology is the potential integration of high performance circuits and added functionality for mobile display systems.