Concepedia

Electrical Characteristic Study of an SOI-LIGBT With Segmented Trenches in the Anode Region

Jing Zhu, Long Zhang, Weifeng Sun, Meng Chen, Feng Zhou, Minna Zhao, Longxing Shi, Yan Gu, Sen Zhang

IEEE Transactions on Electron Devices · 2016 · 45 citations · 10 references

Abstract

This paper presents the electrical characteristic of a 500 V silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT) with segmented trenches in the anode (STA) region. The STA-LIGBT features segmented n + anodes and segmented trenches. The segmented n + anodes are shorted to the p + anode, which accelerates the extraction of stored electrons during the device turn-OFF. The segmented trenches are arranged between the p + anode and the shorted n + anode. The resistors between the adjacent segmented trenches and the adjacent segmented n + anodes contribute to low snapback voltage (V S ) while maintain high current density. In addition, an internal diode is formed by introducing the shorted n + anode. The 3-D simulations and the experiments are carried out to characterize the electrical performances of the STA-LIGBT and its internal diode. Compared with the conventional SOI-LIGBT, the STA device achieves a 73% improvement in turn-OFF time (t OFF ) at the same current density. Correspondingly, the internal diode of the STA-LIGBT achieves a forward voltage drop (V F ) of 1.32 V and a reverse recovery time (t rr ) of 321 ns, which are superior to those of a conventional p-i-n SOI diode.