ACS Applied Materials & Interfaces · 2012 · 35 citations · 24 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySemiconductor MaterialsThin FilmsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsSilicon MaterialsThin Film AnnealingThin Film Electrical PropertiesAnnealingCrystalline SiliconElectrical Conductivity EnhancementLaser AnnealingOrder-disorder Phase TransitionSiliconSilicon CharacterizationSilicon Thin Films
We report a solution process for the synthesis of crystalline silicon from the liquid silane precursor cyclohexasilane (Si(6)H(12)). Polysilane films were crystallized through thermal and laser annealing, with plasma hydrogenation at atmospheric pressure generating further structural changes in the films. The evolution from amorphous to microcrystalline is characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and impedance spectroscopy. A four-decade enhancement in the electrical conductivity is attributed to a disorder-order transition in a bonded Si network. Our results demonstrate a potentially attractive approach that employs a solution process coupled with ambient postprocessing to produce crystalline silicon thin films.
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High-mobility ultrathin semiconducting films prepared by spin coating
David B. Mitzi, Laura L. Kosbar, Conal E. Murray et al. · Nature · 2004 · 522 citations
Mechanism of hydrogen-induced crystallization of amorphous silicon
Saravanapriyan Sriraman, Sumit Agarwal, Eray S. Aydil et al. · Nature · 2002 · 408 citations
Natural Sciences, Materials Engineering, Materials Science +14