Controlled Electrochemical Formation of Ge_<i>x</i>Sb_<i>y</i>Te_<i>z</i> using Atomic Layer Deposition (ALD)

Abstract

This paper describes a systematic study of the deposition of a phase change material, GexSbyTez, using electrochemical atomic layer deposition (E-ALD). Cyclic voltammetry in aqueous solutions was used to investigate the deposition of atomic layers of Ge, Sb and Te. That data was used to develop initial E-ALD cycle conditions to form the binaries: SbxTey and GexTey. Films of the ternary material GexSbyTez, were then deposited with a wide range of compositions by alternating the binary cycles in various combinations. Conformal nanofilms were formed that exhibited good crystallinity.