Fast and high light yield scintillation in the Ga₂O₃ semiconductor material

Abstract

Abstract We report the distinct scintillation properties of the well-known Ga 2 O 3 semiconductor material. Under UV excitation, the photoluminescence (PL) emission peak appeared near a wavelength of 380 nm with a quantum yield of 6%, and fast decays of 8 and 793 ns were observed. In contrast, the X-ray-induced scintillation spectrum showed an intense emission band near a wavelength of 380 nm, whose decay curve was reproduced using two exponential decay components with time constants of 8 and 977 ns. The pulse height spectrum of 137 Cs γ-rays measured using Ga 2 O 3 showed a clear photoabsorption peak with a light yield of 15000 ± 1500 photons/MeV.