Electronic Properties of Complex Self‐Assembled InAs Nanowire Networks

Abstract

Electrical transport in epitaxially merged InAs nanowire junctions and nanowire networks is investigated. Single-crystalline zinc blende regions form at the L- and T-shaped nanowire links. The impact of the junction regions on electrical transport is examined at room temperature and at cryogenic temperatures. The cross configuration is utilized to compare transport properties extracted from the Hall effect and field-effect transistor characterizations. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.