Electrical and Physical Properties of HfO[sub 2] Deposited via ALD Using Hf(OtBu)[sub 4] and Ozone atop Al[sub 2]O[sub 3]

Abstract

films were deposited via precursor and ozone oxidant using atomic layer deposition (ALD) atop We report the impact of annealing conditions on the physical and electrical properties of a on substrate using medium-energy ion scattering spectroscopy, high-resolution transmission electron microscopy, thermal desorption spectra, and electrical measurements. Annealing temperatures influence the microstructure and impurity levels of films. The leakage currents of bilayer were decreased with the increase of annealing temperature and the structures of the bilayer did not break until 850°C. This change was closely related to the reduction of carbon and organic contamination during annealing. However, annealing at 950°C drastically degraded electrical properties due to the intermixing of the bilayer structure. © 2004 The Electrochemical Society. All rights reserved.