Ultra-thin Ti passivation mediated breakthrough in high quality Cu-Cu bonding at low temperature and pressure

Room temperature Cu–Cu direct bonding using surface activated bonding method

T. H. Kim, M.M.R. Howlader, Toshihiro Itoh et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2003 · 335 citations

Natural Sciences, Materials Engineering, Materials Science +15

First-principles calculations of the vacancy formation energy in transition and noble metals

Pavel A. Korzhavyi, Igor A. Abrikosov, B. Johansson et al. · Physical review. B, Condensed matter · 1999 · 322 citations · Full text

Natural Sciences, Materials Science, Physics +17

Copper Wafer Bonding

Andy Fan · Electrochemical and Solid-State Letters · 1999 · 213 citations

Engineering, Materials Engineering, Materials Science +12

Cu–Cu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane-thiol

Chuan Seng Tan, D. F. Lim, Shiv Govind Singh et al. · Applied Physics Letters · 2009 · 181 citations

Natural Sciences, Materials Engineering, Materials Science +17

Novel Cu-to-Cu Bonding With Ti Passivation at 180$^{\circ}{\rm C}$ in 3-D Integration

Yan-Pin Huang, Yu-San Chien, Ruoh-Ning Tzeng et al. · IEEE Electron Device Letters · 2013 · 110 citations

Natural Sciences, Materials Engineering, Materials Science +14