2015 · 44 citations · 10 references
EngineeringElectrical EngineeringMicroelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated PhotonicsOptical Communication SystemsPhotodetectorsPhotonic Integrated CircuitsBandwidthBicmos TechnologyIntegrated Electro-optic DevicesIntegrated Photonic DevicesIntegrated WaveguidesPhotonics-to-electronics IntegrationResponsivitySige Bicmos Design
An advanced photonic BiCMOS process is demonstrated capable, on the receiver side, for 100 Gb/s optical line rate. Key components of this process are monolithically integrated wave-guide Ge photodiodes showing more than 70 GHz bandwidth and 1 A/W responsivity, and SiGe HBTs with fT/fmax values of 240/290 GHz.
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Zero-bias 40Gbit/s germanium waveguide photodetector on silicon
Laurent Vivien, A. Polzer, Delphine Marris‐Morini et al. · Optics Express · 2012 · 421 citations · Full text
Germanium photodetector with 60 GHz bandwidth using inductive gain peaking
Ari Novack, Mike Gould, Yisu Yang et al. · Optics Express · 2013 · 162 citations · Full text