Determination of the type of stacking faults in single-crystal high-purity diamond with a low dislocation density of <50 cm⁻² by synchrotron X-ray topography

Abstract

Abstract The properties of stacking faults in a single-crystal high-purity diamond with a very low dislocation density of <50 cm −2 and a very low impurity concentration of <0.1 ppm were investigated by synchrotron X-ray topography. We found stacking faults on the {111} plane and determined the fault vector f of the stacking faults to be on the basis of the f · g extinction criteria. Furthermore, we have found that the partial dislocations are of the Shockley type on the basis of the b · g extinction criteria. Consequently, we concluded that the stacking faults are of the Shockley type and formed because of the decomposition of dislocations with into dislocations with and .