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Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures

Materials EngineeringMaterials ScienceElectrical EngineeringAluminium NitrideEngineeringGan GrowthApplied PhysicsAluminum Gallium NitrideSapphire SubstrateGan Power DeviceMocvd MethodGallium OxideCategoryiii-v Semiconductor