Electron Transport Properties of Ga_<i>x</i>In_1-<i>x</i>Sb Calculated by the Monte Carlo Method

Abstract

Electron transport properties of GaxIn1-xSb were investigated by the Monte Carlo methods. An emphasis was placed on the electron transfer effect in the material for various compositions. The threshould field was shown to increase from 600V/cm to 700V/cm with increase in the Ga composition despite a decrease in the energy separation between Γ and L valleys, while the peak-to-valley ratio of the drift velocity decreases. The upper frequency limit of negative differentical mobility, effects of temperature rise and impurity scattering, and the low field mobility were also calculated by using almost the same program. It was revealed that materials with the Ga composition between 60 and 80% (atomic) are most suitable for low-dissipation power transferred-electron devices, in particular digital devices.