EU PVSEC · 2009 · 80 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsOxide SemiconductorsSemiconductor Device MaterialsSilicon MaterialsAmorphous Oxide SemiconductorsAmorphous OxidesAmorphous Semiconductor FilmsAmorphous SiliconSemiconductor Oxide Thin FilmsSilicon Device Materials
This paper presents a study on the optimal i-layer thickness for high efficiency amorphous silicon p-i-n solar cells deposited on doped LPCVD-ZnO. The optimization has led to excellent stabilized efficiencies at remarkably low amorphous i-layer thicknesses. A light-soaked single-junction a-Si:H cell with record efficiency of 10.09 % on 1 cm2 was independently confirmed by NREL. In a table, results of measurements done on the same devices at Oerlikon Solar-Lab Neuchâtel and NREL laboratories reveal very low deviations between both characterizations. The processes developed for a-Si:H cells were applied to the preparation of mini-modules (10 x 10 cm2). Measurements on these light-soaked mini-modules at ESTI laboratories of JRC have confirmed a module aperture efficiency of 9.20 ± 0.19 %.