Amorphous ZnO based resistive random access memory

Yong Huang, Zihan Shen, Ye Wu, Xiaoqiu Wang, Shufang Zhang, Xiaoqin Shi, Haibo Zeng

RSC Advances · 2016 · 143 citations · 13 references

Concepts

Abstract

Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated.

References

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