Publication | Closed Access
Amorphous ZnO based resistive random access memory
141
Citations
13
References
2016
Year
Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringNanoelectronicsApplied PhysicsAg/a-zno/pt DevicesMagnetoresistive Random-access MemoryMemory DeviceSemiconductor MemoryAmorphous ZnoResistive Switching CharacteristicsResistive Random-access MemoryMicroelectronicsPhase Change MemoryAmorphous Zinc Oxide
Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated.
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