Effects of Interface Al[sub 2]O[sub 3] Passivation Layer for High-k HfO[sub 2] on GaAs

Abstract

The effects of passivation, formed by atomic layer deposition (ALD) at the interface of , were investigated by high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and capacitance–voltage measurements. The results indicate that the incorporation of Ga by diffusion into the layer is reduced by the passivation at the interface. The Ga and As contents of the films decreased with increasing amount of interfacial passivation, while the capacitance value decreased. The phase optimized at five ALD cycles effectively suppressed the formation of interfacial oxide and subsequently improved the electrical properties.