Analytic Study of the Si‐B Phase When  B 2 O 3 Is Diffused in Si

Abstract

An investigation of the compound formed when silicon is doped from in the 950°–1100°C temperature range has been carried out. Depending on the composition, four main regions have been analyzed by different techniques: ionic analysis, x‐ray diffraction, microsonde, electron diffraction, and infrared spectroscopy. Results showed that the Si‐B phase crsytallizes on the cubic system with a 6.20Å parameter and the composition closely resembles.