Applied Physics Letters · 2015 · 79 citations · 23 references
Natural SciencesMaterials EngineeringMaterials ScienceInorganic ChemistryMaterials ChemistrySemiconductor MaterialsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsDopingOxide SemiconductorsSemiconductor Crystal GrowthCrystalline Phase FormationCrystalline StructureDopant ActivationDoped SemiconductorsGallium OxideLow-temperature GrowthOxide DopingX-ray Absorption Spectroscopy
Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga2O3:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of β-Ga2O3:Sn grown using edge-defined film-fed growth at 1725 °C is compared with amorphous Ga2O3:Sn films deposited at low temperature (<300 °C). Our XAS analyses indicate that activated Sn dopant atoms in conductive single crystal β-Ga2O3:Sn are present as Sn4+, preferentially substituting for Ga at the octahedral site, as predicted by theoretical calculations. In contrast, inactive Sn atoms in resistive a-Ga2O3:Sn are present in either +2 or +4 charge states depending on growth conditions. These observations suggest the importance of growing Ga2O3:Sn at high temperature to obtain a crystalline phase and controlling the oxidation state of Sn during growth to achieve dopant activation.
23
Oxygen vacancies and donor impurities in β-Ga2O3
Joel B. Varley, J. R. Weber, Anderson Janotti et al. · Applied Physics Letters · 2010 · 1K citations
Development of gallium oxide power devices
Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · physica status solidi (a) · 2013 · 576 citations