GaN-based quantum dot infrared photodetector operating at 1.38 µm

Abstract

A GaN/AlN quantum-dot infrared photodetector based on intraband absorption and lateral carrier transport has been demonstrated for the first time. The photocurrent spectrum is peaked at λ=1.38 µm at a temperature of 77 K and it is p-polarised. The signal is due to the dot absorption from the s- to the pz-shell.