Effect of annealing temperature on the electrical and structural properties of V/p-GaN Schottky structures

Extraction of Schottky diode parameters from forward current-voltage characteristics

S. K. Cheung, N.W. Cheung · Applied Physics Letters · 1986 · 2.7K citations

Engineering, Electrical Engineering, Materials Science +17

Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

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Barrier inhomogeneities at Schottky contacts

J.H. Werner, H. Güttler · Journal of Applied Physics · 1991 · 1.6K citations

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Electron transport at metal-semiconductor interfaces: General theory

R. T. Tung · Physical review. B, Condensed matter · 1992 · 1.5K citations

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A modified forward <i>I</i>-<i>V</i> plot for Schottky diodes with high series resistance

H. Norde · Journal of Applied Physics · 1979 · 1.5K citations

Engineering, Electrical Engineering, Materials Science +14