ADVANCEMENTS IN DC AND RF MOSFET MODELING WITH THE EPFL-EKV CHARGE BASED MODEL

Abstract

We discuss new developments of the compact EPFL-EKV charge based model for analog circuit simulations that are consistent with advanced CMOS technology. The physical foundations of the EKV model and in particular the normalization of the currents and charges are presented and their implications on the model structure are discussed. Based on the hierarchical model description, new effects such as poly gate depletion and quantum confinement can be simply considered as a model generalization. Finally, the consistency of the model is illustrated through the related RF derivation whose equivalent circuit, based on normalized transadmittances and frequencies, can be expressed as a combination of two generic functions only.