Development of Quantum Hall Array Resistance Standards at NMIJ

Abstract

A quantum Hall array resistance standard (QHARS) device with a nominal value close to 10 kΩ on the <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i</i> = 2 plateau has been developed on a GaAs/AlGaAs heterosubstrate. This QHARS device consists of 266 Hall bar elements, and its nominal value has only 0.0342 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> difference based on <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">K-90</sub> ( = 25 812.807 Ω) from an integer value of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> . As a result of comparison measurements with the conventional Quantized Hall Resistance Standard via the 100- Ω standard resistor, the value of the QHARS device agrees with its nominal value within 3.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> .