Analytical model for p-channel MOSFETs

Abstract

An analytical model for p-channel MOSFETs is described. The model is based on the unified charge control model (UCCM), which describes both the subthreshold and the above-threshold regimes using one continuous equation. Also derived and incorporated into the model is an equation for the dependence of the hole mobility on gate-to-source voltage and threshold voltage. The model makes it possible to propose a simple and unambiguous characterization procedure for extracting device parameters. Detailed measurements of capacitance-voltage and current-voltage characteristics of p-channel MOSFETs with different gate lengths are reported. Results are in excellent agreement with experimental results. The model is ideally suited for applications in computer-aided design software for simulation of both digital and analog circuits, and for automated parameter extraction.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>