Growth Characteristics of Atomic Layer Deposited TiO[sub 2] Thin Films on Ru and Si Electrodes for Memory Capacitor Applications

Abstract

thin films were grown by an atomic-layer-deposition process at growth temperatures ranging from on Ru and Si substrates using and as metal precursor and oxygen source, respectively, for metal-insulator-metal capacitor application in dynamic random access memories. The saturated film growth rate on Ru and Si substrates was 0.034 and , respectively. The film growth on a Ru substrate showed a rather long incubation period and the incubation period decreased with increasing pulse time, whereas the pulse time had almost no influence on the incubation period. A growth rate transition, from low to high values, (thickness ) was observed when the films were grown at temperatures , whereas the films grown at lower temperatures did not show the transition. The transition was due to the structural change of the film from an amorphous/nanocrystalline to the well-crystallized polycrystalline anatase phase. The films grown at temperatures showed a dielectric constant of . A -thick film showed an equivalent oxide thickness of and a leakage current density of at .