Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA)

Abstract

The authors have analyzed the characteristics of a cylindrical thin-pillar transistor, (CYNTHIA), which is a vertical MOS transistor with a cylindrical gate electrode surrounding a submicrometer-diameter silicon pillar. The device characteristics are calculated by solving Poisson's equation in cylindrical coordinates. Results showed that CYNTHIA has three superior features: excellent subthreshold characteristics, enhanced electron mobility, and increased sheet electron concentration. These superior characteristics result in a feature size twice that of vertical SOI transistors, The authors' calculation is that CYNTHIA is quite an attractive device design for future ultra-high-density LSIs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>