Application of the photoelasticity method to the investigation of stresses around individual dislocations and their influence on crystal properties

Abstract

The possibility of the application of the photoelasticity method for revealing individual dislocations in single crystals of thirty elements and compounds transparent for visible and infrared light is estimated. Experimental proofs of the realization of this possibility are given in application to GaAs crystals in which edge dislocations are detected lying along 〈110〉 and 〈100〉 directions with Burgers vector along 〈110〉. Peculiarities of stress measurement in microregions around dislocations are described. The prospects of the photoelasticity method for the investigation of local changes of magnetic, electric, and optical crystal properties caused by the stress fields around individual dislocations are discussed as well.