Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTs

Abstract

Reports on the manufacturability of state-of-the-art passivated 0.1- mu m low-noise InP HEMTs (high electron mobility transistors). These HEMTs offer an attractive, cost-effective solution to millimeter-wave satellite communications. The authors discuss their yield and reproducibility, as well as typical performance at V- and W-bands.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>