Publication | Closed Access
GaInP/GaAs monolithic tandem concentrator cells
22
Citations
8
References
2002
Year
Unknown Venue
Electrical EngineeringWafer Scale ProcessingEngineeringSolar PowerApplied PhysicsGrid DesignComputer EngineeringSemiconductor Device FabricationPeak EfficiencyMicroelectronicsOptoelectronicsPhotovoltaicsAntireflectance Coat
This paper discusses design considerations for the GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140-180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. We focus on the issues of grid design, top-cell thickness, and antireflectance coat. We also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.
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