A 1V printed organic DRAM cell based on ion-gel gated transistors with a sub-10nW-per-cell Refresh Power

Abstract

This paper presents an 8 × 8 DRAM array fabricated using an aerosol jet printer to demonstrate the feasibility of gain-cell DRAMs in a p-type-only organic thin film transistor (OTFT) technology. This printing method can accommodate functional inks with a variety of viscosities and has a patterning precision of 10 μm. The underlying design philosophy was to implement a general purpose memory array with full read and write capability that can be utilized for a range of applications including electrochromic displays and/or sensor sheet arrays. The basic read and write operations of the 3T OTF memory cell are illustrated. Each transistor has a channel width of 500μm and a channel length of 25μm.