Organic Light‐Emitting Field‐Effect Transistors Operated by Alternating‐Current Gate Voltages

Abstract

Organic light-emitting field-effect transistors are operated by a novel method characterized by the application of ac voltages to the gate electrode. This prompts carrier injection from both source and drain electrodes into the organic layer (a thin film or a crystal) without altering the device constitution. Stronger emissions are observed from the device with increasing gate voltage frequencies. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.