Early lethal SEGR failures of VDMOSFETs considering nonuniformity in the rad-hard device distribution

Abstract

In 1999, Titus et al. studied single-event gate rupture failures of vertical MOSFETs for many parameters where the MOSFET universe was assumed to consist of homogeneous devices. A non-homogeneous universe is now considered. Time-to-failure is studied using Monte Carlo methods. Boundaries are ascribed applying the empirical equation presented by Titus et al.