High voltage SOI P-channel field MOSFET structures

Abstract

We comparatively investigated the impact of layout and trench on four types of field oxide Pch MOSTs in a thick film SOI technology with due consideration to isolation trench. High blocking capability (∼20V per um of drift length) for both off- and on- state breakdown voltage close to 300V, along with reasonable high temperature reverse bias ruggedness, has been experimentally realized with minimum overhead area by source-centered single trench structure in which the trench sidewall grounded.