Transistor operation of 30-nm gate-length EJ-MOSFETs

Abstract

We have fabricated electrically variable shallow junction metal-oxide-silicon field-effect transistors (EJ-MOSFET's) to investigate transistor characteristics of ultrafine-gate MOSFET's. By using EB direct writing onto an ultrahigh-resolution negative resist (calixarene), we achieved a gate length of 32 nm for the first time. The short-channel effects were effectively suppressed by electrically induced ultrashallow source/drain regions, and the fabricated device exhibited normal transistor characteristics even in the 32-nm gate-length regime at room temperature: an ON/OFF current ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> and a cut-off current of 20 pA/μm.