Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Experimental demonstration of wafer-scale growth of well-aligned, dense, single-walled carbon nanotubes on <formula formulatype="inline"><tex Notation="TeX">$4^{\prime\prime}$</tex></formula> ST-cut quartz wafers is presented. We developed a new carbon nanotube (CNT) wafer-scale growth process. This process allows quartz wafers to be heated to the CNT growth temperature of <formula formulatype="inline"><tex Notation="TeX">$865\, ^\circ$</tex></formula>C through the alpha–beta phase transformation temperature of quartz (<formula formulatype="inline"><tex Notation="TeX">$573\, ^\circ$</tex> </formula>C) without wafer fracture. We also demonstrate wafer-scale CNT transfer to transfer these aligned CNTs from quartz wafers to silicon wafers. The CNT transfer process preserves CNT density and alignment. Carbon nanotube FETs fabricated using these transferred CNTs exhibit high yield. Wafer-scale growth and wafer-scale transfer of aligned CNTs enable carbon nanotube very large-scale integration circuits and their large-scale integration with silicon CMOS. </para>