Evaluation of the Concentration of Deep Levels in Semi-Insulating CdTe by Photoconductivity and TEES

Abstract

The concentrations of near-midgap levels in high-resistivity CdTe were estimated based on a combined evaluation of room temperature lux-ampere characteristics and thermoelectric effect spectroscopy measurements (77-400 K). A simulation of experimental data was performed by a numerical solution of drift-diffusion and Poisson equations using a model with two deep levels. A comparison of crystals doped with shallow and deep dopants is given.