Physical understanding and optimum design of high-power millimeter-wave pulsed IMPATT diodes

Abstract

A physical understanding of the specific mode of operation of high-power millimeter-wave pulsed IMPATT diodes is derived from a self-consistent numerical model. It is shown theoretically that there exists a uniformly avalanching p-i-n-like mode in high-current-density, pulsed silicon double-drift IMPATT diodes, as has been previously suggested. An optimum symmetrical flat doping-profile double-drift structure for 100-GHz operation is presented. It could deliver more than 40 W of available peak power with a 10% conversion efficiency accounting for circuit losses, at a safe junction temperature rise. The theoretical results allow an optimum design of the 94-GHz IMPATT structure for peak output power in excess of 50 W under low duty cycle.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>