IEEE Transactions on Nanotechnology · 2004 · 10 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsElectron Beam LithographyNanoelectronicsNanowiresSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor PhysicsNanowire DevicesNanowire Semiconductor MaterialsOhmic ContactsRectifier DesignRectifying ContactsSchottky Barrier ContactsSchottky ContactsSemiconductor Nanowires
It has been found that Ni forms ohmic contacts and Ti forms Schottky-barrier contacts to boron nanowires (BNWs). Using two-step electron-beam lithography, Ni and Ti electrodes are subsequently attached onto the ends of a single BNW. As a result, a nanoscale rectifier is created using a BNW.
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Single- and multi-wall carbon nanotube field-effect transistors
Richard Martel, Thomas Schmidt, Herbert Shea et al. · Applied Physics Letters · 1998 · 2.8K citations · Full text
Logic Circuits with Carbon Nanotube Transistors
Adrian Bachtold, P. Hadley, Takeshi Nakanishi et al. · Science · 2001 · 2.6K citations · Full text
Engineering, Computer Engineering, Electrical Engineering +17