A pressure sensor based on a HBAR micromachined structure

Abstract

In this work, we propose a pressure sensor fabricated on compound LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /Silicon/Silicon substrates obtained by Au/Au bonding at room temperature and double face lapping/polishing of LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /silicon stack and a final gold bonding with a structured silicon wafer. Sensitivity of the final sensor to bending moments then is tested and results show pressure sensitivity of such devices.