Integration of waveguides and photodetectors in SiGe for 1.3 /spl mu/m operation

Abstract

The integration of single-mode rib waveguides and photodetectors in silicon using MBE-grown SiGe-layers is reported. Short photodetectors exhibit dark currents below 200 nA at 7 V reverse bias. For the fiber-waveguide-detector coupling an overall quantum efficiency of 11% has been achieved at 7 V reverse bias for /spl lambda/=1.3 μm. The maximum bandwidth is 2 GHz.