Optical and Electrical Properties of p-GaSe Doped with Sb

Abstract

Measurements of photoluminescence (PL) and Hall effect have been made on Sb-doped p-GaSe. The PL spectra at 77 K are dominated by two new emission bands at 1.75 and 1.66 eV. The 1.66 emission band is enhanced by adding Sb. The temperature dependences of the peak energy and the PL intensity of 1.66 eV emission band reveal that the acceptor level is located at 0.09 eV above the valence band. The deep acceptor level located at 0.57 eV above the valence band is detected by using Hall effect measurements. We found that the deep acceptor level is probably associated with defects or defect complexes formed by Sb atoms in the interlayer.