Accurate modeling of AlGaAs/GaAs heterostructure bipolar transistors by two-dimensional computer simulation

Abstract

An accurate modeling of Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf> As/GaAs heterostructure bipolar transistors (HBT's) has been carried out using a two-dimensional numerical simulator. By comparing an HBT with a GaAs homotransistor, the potential advantages of the HBT, such as a high injection efficiency, a low voltage drop in the base region, and an improvement in high-frequency operation, were well confirmed, not only by the calculated transistor performance but also by the carrier and the potential distributions. It was also demonstrated that the injected electrons spread more and more conspicuously into the extrinsic base region, even for the HBT's with the increase in the collector current. Taking into account the near ballistic transport in the base region, it is possible to realize an abrupt HBT with a maximum cutoff frequency of above 130 GHz and current gains of up to 3200. The HBT was confirmed to be a promising device for the realization of ultrahigh-frequency integrated circuits.