A. Yoshii - Concepedia

Author

A. Yoshii

NTT (Japan)

Also Known As

A Yoshii, A. YOSHII, A. Yoshi'i, A. Yoshii, Akane Yoshii, Aoi Yoshii, Ayumi YOSHII, Ayumi Yoshii

Publications

811

Citations

H-Index

Concepts

All Affiliations

NTT (Japan)NTT Basic Research Laboratories The University of Osaka University of Illinois Urbana-Champaign

About

A. Yoshii is an author at NTT (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	636
2	Applied Physics	14	17	606
3	Electrical Engineering	14	15	525
4	Natural Sciences	4	4	137
5	Computer Engineering	4	4	130

A. Yoshii

Publications

715

Citations

H-Index

Page 1

	Year	Citations
Accurate modeling for submicrometer-gate Si and GaAs MESFET's using two-dimensional particle simulation A. Yoshii, M. Tomizawa, K. Yokoyama IEEE Transactions on Electron Devices EngineeringGaas MesfetSi MesfetPower ElectronicsSemiconductor Device	1983	70
A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon A. Abramo, L. Baudry, R. Brunetti, IEEE Transactions on Electron Devices EngineeringCharge TransportElectron PhysicNanoelectronicsPlasma Simulation	1994	69
Silk fibroin nanofibers: a promising ink additive for extrusion three-dimensional bioprinting Shinji Sakai, A. Yoshii, Shinya Sakurai, Materials Today Bio	2020	67
Temperature dependence of hot carrier effects in short-channel Si-MOSFETs Nobuyuki Sano, M. Tomizawa, A. Yoshii IEEE Transactions on Electron Devices Device ModelingHot Carrier SuppressionElectrical EngineeringEngineeringPhysics	1995	61
A three-dimensional analysis of semiconductor devices A. Yoshii, H. Kitazawa, M. Tomizawa, IEEE Transactions on Electron Devices Numerical AnalysisEngineeringPower ElectronicsSemiconductor DeviceSemiconductors	1982	56
Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulation M. Tomizawa, A. Yoshii, K. Yokoyama IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringRf Semiconductor	1985	47
Two-dimensional semiconductor analysis using finite-element method T. Adachi, A. Yoshii, T. Sudo IEEE Transactions on Electron Devices EngineeringCommon EmitterPower ElectronicsSemiconductor DeviceSemiconductors	1979	45
Accurate modeling of AlGaAs/GaAs heterostructure bipolar transistors by two-dimensional computer simulation K. Yokoyama, M. Tomizawa, A. Yoshii IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringLow Voltage DropAbrupt HbtSemiconductor Device	1984	40
Hot-electron velocity characteristics at AlGaAs/GaAs heterostructures M. Tomizawa, K. Yokoyama, A. Yoshii IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringHot-electron Velocity CharacteristicsEngineeringPhysics	1984	33
Threshold-sensitivity minimization of short-channel MOSFET's by computer simulation K. Yokoyama, A. Yoshii, S. Horiguchi IEEE Transactions on Electron Devices Device ModelingThreshold SensitivityElectrical EngineeringSmall-dimension MosfetEngineering	1980	30

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