Application of a pulsed laser for evaluation and optimization of SEU-hard designs [CMOS]

Abstract

Pulsed laser single-event upset tests are used to pinpoint and characterize sensitive nodes of circuits and to provide feedback relevant to the development and optimization of radiation-hard designs. The results presented reveal the advantages of incorporating laser evaluation at an early stage into programs described for the development of radiation-hardened parts. A quantitative correlation is observed between the laser single-event upset and single-event latchup threshold measurements and those performed using accelerator-based heavy ion testing methods.