IEEE Electron Device Letters · 2013 · 45 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceMicrowave EngineeringOptoelectronicsPhotonicsHigh-frequency Semiconductor DevicesLight SourcesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesOptical SourcesOptoelectronic DevicesFabry-perot ResonatorsMaximum Power OutputPhotoconductorsPower Output
It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz is generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Pérot cavity. To the best of our knowledge, it is the highest power ever reported for a single photomixer in the J-band.
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Photomixing up to 3.8 THz in low-temperature-grown GaAs
E. R. Brown, K. A. McIntosh, K. B. Nichols et al. · Applied Physics Letters · 1995 · 487 citations
Photoelectric Mixing of Incoherent Light
A. Theodore Forrester, R.A. Gudmundsen, Philip O. Johnson · Physical Review · 1955 · 321 citations
Natural Sciences, Physics, Optics +12