IEEE Electron Device Letters · 2013 · 26 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesNanowiresOptoelectronic DevicesPhotodetectorsSemiconductor DetectorsSolar CellsUltraviolet DetectorsDynamic ResponseNanowire PhotodetectorsNanowire Solar CellsPhotodetectionPhotodetector DetectivityResponsivitySolar Cell FabricationUltraviolet Photodetectors
This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <;370 nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is ~218 and the measured responsivity is 3.39 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-4</sup> A/W. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of ~1000.
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ZnO Nanowire UV Photodetectors with High Internal Gain
Cesare Soci, A. Zhang, Bin Xiang et al. · Nano Letters · 2007 · 2.6K citations