Advanced Materials · 2010 · 435 citations · 28 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsNanowiresOptoelectronic DevicesPhotodetectorsPhotovoltaic DevicesSolar CellsUltraviolet DetectorsDetectorsNanowire DevicesNanowire PhotodetectorsNanowire Solar CellsP-n Junction DetectorsP-n Junction Solar CellsPhotodetectionUltraviolet Photodetectors
Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, are demonstrated. Moreover, a CdSe-nanowire red-light detector powered by a nanoscale ZnO/GaN photovoltaic cell is also demonstrated, which extends the device function to a selective multiwavelength photodetector and shows the function of an optical logical AND gate. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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