Chemistry Letters · 1989 · 34 citations · 13 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsInterface ScienceSemiconductor MaterialsQuantum TunnelingScanning Probe MicroscopySemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsBand BendingConductionConduction BandElectron TunnelingIn Situ MicroscopySurface Band BendingTunneling In SemiconductorsTunneling Phenomena
Abstract It is found in this study that electron tunneling from the conduction band in the semiconductor to the metal tip is possible if the electrode potential of the semiconductor is negative with respect to the flat band potential. The result clearly reveals the role of band bending in semiconductors for electron tunneling at the semiconductor/liquid interface.
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Atomic-Resolution Microscopy in Water
Richard Sonnenfeld, Paul K. Hansma · Science · 1986 · 485 citations
Hsue Yang Liu, Fu Ren F. Fan, Charles W. Lin et al. · Journal of the American Chemical Society · 1986 · 233 citations