In-Situ Scanning Tunneling Microscopy of Semiconductor(n-TiO2)/Liquid Interfaces. A Role of Band Bending in Semiconductors

Kingo Itaya, Eisuke Tomita

Chemistry Letters · 1989 · 34 citations · 13 references

Concepts

Abstract

Abstract It is found in this study that electron tunneling from the conduction band in the semiconductor to the metal tip is possible if the electrode potential of the semiconductor is negative with respect to the flat band potential. The result clearly reveals the role of band bending in semiconductors for electron tunneling at the semiconductor/liquid interface.

References

13