High Ge Content of SiGe Channel pMOSFETs on Si (110) Surfaces

Abstract

The characteristics of Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.8</sub> channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.8</sub> (110) PFET are enhanced by 70% and by 80% for the <110> channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe <110>/(110) PFET has ~ 200% hole mobility enhancement. The performance difference of the SiGe <110>/(110) and <100>/(110) PFET is about 2.7 times when considering mobility, and these effects are explained.