A sub-ns time-gated CMOS single photon avalanche diode detector for Raman spectroscopy

Abstract

A time-gated single photon avalanche diode (SPAD) has been designed and fabricated in a standard high voltage 0.35 μm CMOS technology for Raman spectroscopy. The sub-ns time gating window is used to suppress the fluorescence background typical of Raman studies, and also to minimize the dark count rate in order to maximize the signal-to-noise ratio of the Raman signal. The proposed time-gating technique is applied for measuring the Raman spectra of olive oil with a gate window of 300 ps, and shows significant fluorescence suppression.