IEEE Journal of Quantum Electronics · 1993 · 24 citations · 18 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsQuantum OptoelectronicsQuantum WellsSemiconductor LasersCarrier ConfinementDiode Laser Threshold CurrentQuantum Well Laser DiodesSemiconductor Laser DiodesTemperature Dependence Of DiodesTemperature Dependence Of Laser PerformanceThreshold BehaviorThreshold Current Reduction
A modified multiple-quantum-barrier structure has been applied to a 630-nm-band laser diode. The result is a laser exhibiting a maximum operating temperature of 74 degrees C and a threshold current of 49 mA. These characteristics correspond to a 22 degrees C increase in the operating temperature and over a 50% decrease in the threshold current, in comparison to an identical laser without a multiple quantum barrier. This is the first time, to the authors' knowledge, that a significant decrease in the threshold current of a laser has been directly attributed to the influence of a multiple quantum barrier.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Tunneling in a finite superlattice
Raphael Tsu, L. Esaki · Applied Physics Letters · 1973 · 2.4K citations
Semiconductor Physics. An Introduction
D. J. Robbins · Optica Acta International Journal of Optics · 1983 · 229 citations
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