Nanostructure of Fluorocarbon Films Deposited on Polystyrene from Hyperthermal C<sub>3</sub>F<sub>5</sub><sup>+</sup> Ions

F. Ahu Akin, Inkook Jang, Mark L. Schlossman, Susan B. Sinnott, G. Zając, Erick Fuoco, Muthu B. J. Wijesundara, Ming Li, Sai Venkatesh Pingali, Amanda T. Wroble,

The Journal of Physical Chemistry B · 2004 · 27 citations · 22 references

Concepts

Abstract

Fluorocarbon films were grown on polystyrene in vacuum from 25- to 100-eV mass-selected C 3 F 5 + ion beams. The films were analyzed by X-ray photoelectron spectroscopy, atomic force microscopy, and X-ray reflectivity after exposure to the atmosphere for 4−8 weeks. The X-ray reflectivity indicates films that range from ∼30 to 60-Å thick. The thinner films form at lower ion energies, where the ion penetration depth and efficiency of film formation are lowest. X-ray reflectivity estimates air−fluorocarbon film roughness values of ∼6 Å for 25- and 50-eV films but ∼20 Å for the 100-eV films. The fluorocarbon−polystyrene-buried interface displays similar roughness and trends with ion energy. The AFM roughness trends are similar, but the absolute AFM roughnesses are only ∼ 1 / 4 of the X-ray reflectivity values. This discrepancy is attributed to tip effects and the method of determining roughness by AFM. The AFM images and power spectral densities of the 100-eV films displayed quasi-periodic cones spaced 300−700 Å apart. Such features are either absent or of much lower amplitude in the 25- and 50-eV films. Classical molecular dynamics simulations of C 3 F 5 + deposition on polystyrene at energies of 50 and 100 eV/ion reveal that etching at the higher energy is largely responsible for the dissimilar film structures obtained experimentally. These results demonstrate that deposition of the fluorocarbon polyatomic ion C 3 F 5 + allows control of film nanostructure at the surface and buried interface.

References

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